01/99 b-63 p1086, p1087 p-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage 30 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate surface mount SMPP1086, smpp1087 at 25c free air temperature: p1086 p1087 process pj99 static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss 30 30 v i g = 1 a, v ds = ?v gate reverse current i gss 22nav gs = 15 v, v ds = ?v gate source cutoff voltage v gs(off) 10 5 v v ds = C 15 v, i d = C 1 a saturation drain current (pulsed) i dss C 10 C 5.0 ma v ds = C 20 v, v gs = ? v drain cutoff current i d(off) C 10 C 10 na v ds = C 15 v, v gs = 12 v (p1086) C 0.5 C 0.5 a v gs = 7 v (p1087) t a = 85c drain reverse current i dgo 22nav dg = C 15 v, i s = ? a 0.1 0.1 a v dg = C 15 v, i s = ? a t a = 85c drain source on voltage v ds(on) C 0.5 C 0.5 v v gs = ? v, i d = C 6 ma (p1086) C 0.5 C 0.5 v v gs = ? v, i d = C 3 ma (p1087) static drain source on resistance r ds(on) 75 150 i d = C 1 ma, v gs = ? v dynamic electrical characteristics drain source on resistance r ds(on) 75 150 i d = ?, v gs = ? v f = 1 khz common source input capacitance c iss 45 45 pf v ds = C 15 v, v gs = ? v f = 1 khz common source c rss 10 10 pf v ds = ? v, v gs = 12 v (p1086) f = 1 mhz reverse transfer capacitance 10 10 pf v ds = ? v, v gs = 7 v (p1087) switching characteristics v dd = C 6 v, v gs(on) = ?v turn on delay time td (on) 15 15 ns p1086 p1087 rise time t r 20 75 ns v gs(off) 12 7 v turn off delay time td (off) 15 25 ns v d(on) C 6 C 3 ma fall time t f 50 100 ns r l 910 1.8 k choppers analog switches 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-63
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